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| CJD31C NPN CJD32C PNP COMPLEMENTARY SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power amplifier and high speed switching applications. MARKING CODE: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation Power Dissipation (TA=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance VCEO VEBO IC ICM IB PD PD TJ,Tstg JC JA UNITS V V V A A A W W C C/W C/W 100 100 5.0 3.0 5.0 1.0 15 1.56 -65 to +150 8.33 80.1 ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) SYMBOL ICEO ICES IEBO BVCEO VCE(SAT) VBE(ON) hFE hFE fT hfe TEST CONDITIONS VCE=60V VCE=100V VEB=5.0V IC=30mA IC=3.0A, IB=375mA VCE=4.0V, IC=3.0A VCE=4.0V, IC=1.0A VCE=4.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz VCE=10V, IC=500mA, f=1.0kHz 25 10 3.0 20 50 MHz 100 1.2 1.8 MIN MAX 50 20 1.0 UNITS A A mA V V V R1 (26-September 2002) Central TM Semiconductor Corp. CJD31C NPN CJD32C PNP COMPLEMENTARY SILICON POWER TRANSISTOR DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING CODE: FULL PART NUMBER R1 (26-September 2002) |
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